| 2019 | A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency | 신형순 | Article |
| 2011 | A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors | 신형순 | Article |
| 2008 | A full adder design using serially connected single-layer magnetic tunnel junction elements | 신형순; 이승준 | Article |
| 2017 | A Guideline for electron mobility enhancement in uniaxially-strained (100)/(100) and (110)/(110) fin field effect transistors | 신형순 | Article |
| 2016 | A new bias scheme for a low power consumption ReRAM crossbar array | 신형순; 선우경 | Article |
| 2013 | A new circuit model for spin-torque oscillator including perpendicular torque of magnetic tunnel junction | 신형순; 이승준 | Article |
| 1999 | A new hole mobility model for hydrodynamic simulation | 신형순 | Article |
| 2013 | A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect | 신형순 | Article |
| 2017 | A new method for determining the Subgap Density of States in n-/p-Type Low-Temperature polycrystalline-silicon thin-film transistors | 신형순 | Article |
| 2004 | A new weight redistribution technique for electron-electron scattering in the MC simulation | 신형순 | Article |
| 2010 | A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements | 신형순; 이승준 | Article |
| 2004 | A novel sensing circuit for high speed synchronous magneto-resistive RAM | 신형순; 이승준 | Conference Paper |
| 2004 | A sensing circuit for MRAM based on 2MTJ-2T structure | 신형순; 이승준 | Article |
| 2016 | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation | 신형순; 이승준 | Review |
| 2023 | A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory | 신형순; 박지선 | Article |
| 2004 | A unified mobility model for quantum mechanical simulation of MOSFETs | 신형순 | Article; Proceedings Paper |
| 2014 | Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction | 신형순; 이승준 | Article |
| 2013 | Advanced circuit-level model of magnetic tunnel junction-based spin-torque oscillator with perpendicular anisotropy field | 신형순; 이승준 | Article |
| 2005 | Advanced HSPICE macromodel for magnetic tunnel junction | 신형순; 이승준 | Conference Paper |
| 2010 | Advanced macro-model with pulse-width dependent switching characteristic for spin transfer torque based magnetic-tunnel-junction elements | 신형순; 이승준 | Article |
| 1999 | An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability | 신형순; 이승준 | Article |
| 2016 | An analysis of the read margin and power consumption of crossbar ReRAM arrays | 신형순 | Conference Paper |
| 2002 | An anomalous device degradation of SOI narrow width devices caused by STI edge influence | 신형순 | Article |
| 2023 | An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network | 신형순; 박지선; 조성재 | Article |
| 2003 | An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect | 신형순 | Conference Paper |
| 2004 | An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs | 신형순 | Conference Paper |
| 2004 | Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method | 신형순 | Article |
| 2020 | Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM | 신형순 | Article |
| 2019 | Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method | 신형순 | Article |
| 2021 | Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation | 신형순 | Conference Paper |
