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An analysis of the read margin and power consumption of crossbar ReRAM arrays

Title
An analysis of the read margin and power consumption of crossbar ReRAM arrays
Authors
Choi S.Sun W.Lim H.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN
2159-3442JCR Link
Citation
vol. 2016-January
Keywords
bias schemecrossbar arraypower consumptionread marginResistive Random Access Memory (ReRAM)selector
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Abstract
The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application. © 2015 IEEE.
DOI
10.1109/TENCON.2015.7372853
ISBN
9781479986415
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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