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A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors

Title
A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors
Authors
Kim J.Sun W.Park S.Lim H.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2011
Journal Title
Journal of Semiconductor Technology and Science
ISSN
1598-1657JCR Link
Citation
vol. 11, no. 4, pp. 278 - 286
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (L g) and radii (R). Schrödinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.
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엘텍공과대학 > 전자공학과 > Journal papers
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