A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors

Abstract

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (L g) and radii (R). Schrödinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.