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A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Title
A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements
Authors
Lee S.Lee H.Kim S.Shin H.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2010
Journal Title
Solid-State Electronics
ISSN
0038-1101JCR Link
Citation
vol. 54, no. 4, pp. 497 - 503
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element. © 2010 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.sse.2010.01.002
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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