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Advanced HSPICE macromodel for magnetic tunnel junction

Title
Advanced HSPICE macromodel for magnetic tunnel junction
Authors
Lee S.Shin H.Kim D.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2005
Journal Title
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
ISSN
0021-4922JCR Link
Citation
vol. 44, no. 4 B, pp. 2696 - 2700
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces, the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R-V characteristics. ©2005 The Japan Society of Applied Physics.
DOI
10.1143/JJAP.44.2696
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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