Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2018-05-18T08:15:07Z | - |
dc.date.available | 2018-05-18T08:15:07Z | - |
dc.date.issued | 2005 | * |
dc.identifier.issn | 0021-4922 | * |
dc.identifier.other | OAK-2725 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/243144 | - |
dc.description.abstract | Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces, the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R-V characteristics. ©2005 The Japan Society of Applied Physics. | * |
dc.language | English | * |
dc.title | Advanced HSPICE macromodel for magnetic tunnel junction | * |
dc.type | Conference Paper | * |
dc.relation.issue | 4 B | * |
dc.relation.volume | 44 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 2696 | * |
dc.relation.lastpage | 2700 | * |
dc.relation.journaltitle | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | * |
dc.identifier.doi | 10.1143/JJAP.44.2696 | * |
dc.identifier.wosid | WOS:000229095700137 | * |
dc.identifier.scopusid | 2-s2.0-21344451135 | * |
dc.author.google | Lee S. | * |
dc.author.google | Shin H. | * |
dc.author.google | Kim D. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125227 | * |