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A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect

Title
A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect
Authors
Kim J.Sun W.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2013
Journal Title
International Journal of Electronics
ISSN
0020-7217JCR Link
Citation
vol. 100, no. 8, pp. 1072 - 1079
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We present a new I-V model for a long-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET). SG MOSFET is a strong candidate for next generation nanoscale devices due to a high electrostatic channel control, which in turn substantially reduces the short-channel effect. The new model takes into account quantum mechanical (QM) effects in the SG MOSFET using a double triangular QM well model in the strong inversion regime. In contrast with the old model, we consider the Vg dependence of the QM effect. New model yields excellent agreement with 2-D numerical simulation results for various radii and gate oxide thicknesses of the SG MOSFET. © 2013 Copyright Taylor and Francis Group, LLC.
DOI
10.1080/00207217.2012.743063
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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