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Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction

Title
Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction
Authors
Lim H.Lee S.Shin H.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2014
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
vol. 62, no. 2, pp. 666 - 672
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); tunneling magnetoresistance (TMR)
DOI
10.1109/TED.2014.2380819
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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