DSpace at EWHA: Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.contributor.author	이승준	*
dc.date.accessioned	2016-08-28T11:08:25Z	-
dc.date.available	2016-08-28T11:08:25Z	-
dc.date.issued	2014	*
dc.identifier.issn	0018-9383	*
dc.identifier.other	OAK-12390	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/228556	-
dc.description.abstract	Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); tunneling magnetoresistance (TMR)	*
dc.language	English	*
dc.publisher	Institute of Electrical and Electronics Engineers Inc.	*
dc.title	Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction	*
dc.type	Article	*
dc.relation.issue	2	*
dc.relation.volume	62	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	666	*
dc.relation.lastpage	672	*
dc.relation.journaltitle	IEEE Transactions on Electron Devices	*
dc.identifier.doi	10.1109/TED.2014.2380819	*
dc.identifier.wosid	WOS:000348386100059	*
dc.identifier.scopusid	2-s2.0-84921761370	*
dc.author.google	Lim H.	*
dc.author.google	Lee S.	*
dc.author.google	Shin H.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.contributor.scopusid	이승준(36064894500;57207064952)	*
dc.date.modifydate	20240322125227	*