View : 41 Download: 0

A new bias scheme for a low power consumption ReRAM crossbar array

Title
A new bias scheme for a low power consumption ReRAM crossbar array
Authors
Sun, WookyungChoi, SujinShin, Hyungsoon
Ewha Authors
신형순선우경
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN
0268-1242JCR Link1361-6641JCR Link
Citation
vol. 31, no. 8
Keywords
nonvolatile memorycrossbar arrayReRAMpower consumptionread margin
Publisher
IOP PUBLISHING LTD
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 x V-app/12 and 7 x V-app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.
DOI
10.1088/0268-1242/31/8/085009
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE