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An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Title
An anomalous device degradation of SOI narrow width devices caused by STI edge influence
Authors
Lee H.Lee J.-H.Shin H.Park Y.-J.Min H.S.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2002
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
vol. 49, no. 4, pp. 605 - 612
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show the reduction of mobility (NMOSFETs and PMOSFETs) and the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel width. The degradation of MOSFETs' yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (N it) generated by the STI process was identified as the cause of the anomalous degradation.
DOI
10.1109/16.992869
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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