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A sensing circuit for MRAM based on 2MTJ-2T structure

Title
A sensing circuit for MRAM based on 2MTJ-2T structure
Authors
Jang E.-J.Lee S.-Y.Kim H.-J.Shin H.Lee S.Kim D.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2004
Journal Title
Current Applied Physics
ISSN
1567-1739JCR Link
Citation
vol. 4, no. 1, pp. 19 - 24
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology. © 2003 Published by Elsevier B.V.
DOI
10.1016/j.cap.2003.09.007
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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