View : 23 Download: 0

A novel sensing circuit for high speed synchronous magneto-resistive RAM

Title
A novel sensing circuit for high speed synchronous magneto-resistive RAM
Authors
Kim H.Lee S.Shin H.Kim D.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2004
Journal Title
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
ISSN
0021-4922JCR Link
Citation
vol. 43, no. 4 B, pp. 2226 - 2229
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A novel sensing scheme for a magneto-resistive random access memory (MRAM) with a twin cell structure is presented. New sensing circuit has very simple structure while providing stable operation. Voltage-controlled transistor switch limits the voltage across the magnetic tunnel junction (MTJ) under 400 mV while reading. The circuit layout is small enough to fit into 4-cell pitches that high speed synchronous operation is made possible in MRAMs as in DRAMs or SRAMs. We have fully integrated a 256 bit synchronous MRAM operating at 100 MHz with 0.35 um complementary metal oxide semiconductor (CMOS) technology.
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE