Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2016-08-28T11:08:40Z | - |
dc.date.available | 2016-08-28T11:08:40Z | - |
dc.date.issued | 2004 | * |
dc.identifier.issn | 0021-4922 | * |
dc.identifier.other | OAK-2174 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/219429 | - |
dc.description.abstract | A novel sensing scheme for a magneto-resistive random access memory (MRAM) with a twin cell structure is presented. New sensing circuit has very simple structure while providing stable operation. Voltage-controlled transistor switch limits the voltage across the magnetic tunnel junction (MTJ) under 400 mV while reading. The circuit layout is small enough to fit into 4-cell pitches that high speed synchronous operation is made possible in MRAMs as in DRAMs or SRAMs. We have fully integrated a 256 bit synchronous MRAM operating at 100 MHz with 0.35 um complementary metal oxide semiconductor (CMOS) technology. | * |
dc.language | English | * |
dc.title | A novel sensing circuit for high speed synchronous magneto-resistive RAM | * |
dc.type | Conference Paper | * |
dc.relation.issue | 4 B | * |
dc.relation.volume | 43 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 2226 | * |
dc.relation.lastpage | 2229 | * |
dc.relation.journaltitle | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | * |
dc.identifier.wosid | WOS:000221510800128 | * |
dc.identifier.scopusid | 2-s2.0-3142603167 | * |
dc.author.google | Kim H. | * |
dc.author.google | Lee S. | * |
dc.author.google | Shin H. | * |
dc.author.google | Kim D. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125227 | * |