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A unified mobility model for quantum mechanical simulation of MOSFETs

Title
A unified mobility model for quantum mechanical simulation of MOSFETs
Authors
Park, JSLee, JYLee, SShin, HJin, SPark, YJMin, HS
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2004
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN
0374-4884JCR Link
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY vol. 45, no. 5, pp. 1332 - 1337
Keywords
mobility model; MOSFETs; quantum effect; inversion layer; accumulation layer; semiconductor; device modeling
Publisher
KOREAN PHYSICAL SOC
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Document Type
Article

Proceedings Paper
Abstract
A unified electron and hole mobility model for inversion and accumulation layers with quantum effect is presented for the first time. By accounting for the screened Coulomb scattering based on the well-known bulk mobility model and allowing the surface roughness scattering term to be a function of net charge, the new model is applicable to the bulk, inversion, and accumulation layers with only one set of fitting parameters. The new model is implemented in the 2-D quantum mechanical device simulator and gives excellent agreement with the experimentally measured effective mobility data over a wide range of effective transverse field, substrate doping, substrate bias, and temperature.
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엘텍공과대학 > 전자공학과 > Journal papers
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