A unified mobility model for quantum mechanical simulation of MOSFETs

Abstract

A unified electron and hole mobility model for inversion and accumulation layers with quantum effect is presented for the first time. By accounting for the screened Coulomb scattering based on the well-known bulk mobility model and allowing the surface roughness scattering term to be a function of net charge, the new model is applicable to the bulk, inversion, and accumulation layers with only one set of fitting parameters. The new model is implemented in the 2-D quantum mechanical device simulator and gives excellent agreement with the experimentally measured effective mobility data over a wide range of effective transverse field, substrate doping, substrate bias, and temperature.