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An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Title
An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability
Authors
Shin H.Lee S.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
1999
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
vol. 46, no. 4, pp. 820 - 822
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction. © 1999 IEEE.
DOI
10.1109/16.753725
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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