DSpace at EWHA: An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.contributor.author	이승준	*
dc.date.accessioned	2016-08-28T11:08:35Z	-
dc.date.available	2016-08-28T11:08:35Z	-
dc.date.issued	1999	*
dc.identifier.issn	0018-9383	*
dc.identifier.other	OAK-12528	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/228655	-
dc.description.abstract	A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction. © 1999 IEEE.	*
dc.language	English	*
dc.title	An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability	*
dc.type	Article	*
dc.relation.issue	4	*
dc.relation.volume	46	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	820	*
dc.relation.lastpage	822	*
dc.relation.journaltitle	IEEE Transactions on Electron Devices	*
dc.identifier.doi	10.1109/16.753725	*
dc.identifier.wosid	WOS:000079394700035	*
dc.identifier.scopusid	2-s2.0-0032650119	*
dc.author.google	Shin H.	*
dc.author.google	Lee S.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.contributor.scopusid	이승준(36064894500;57207064952)	*
dc.date.modifydate	20240322125227	*