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An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

Title
An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect
Authors
LeeK.-I.C.ShinH.ParkY.J.MinH.S.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2003
Journal Title
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Keywords
Analytical modelsCircuit simulationCMOS technologyComputational modelingDistortionFrequency domain analysisHarmonic analysisMOSFET circuitsSemiconductor device modelingTime domain analysis
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Abstract
In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime. © 2003 IEEE.
DOI
10.1109/SISPAD.2003.1233679
ISBN
780378261
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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