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Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method

Title
Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method
Authors
Choi S.Sun W.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2019
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
IEEE Transactions on Electron Devices vol. 66, no. 1, pp. 759 - 765
Keywords
3-D vertical resistive random access memory (VRRAM)cell variabilitycrossbar arraylumpingread margin (RM)write power (WP)
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
In this paper, the read margin (RM) and write power (WP) of 3-D vertical resistive random access memory (VRRAM) are analyzed by considering the variation in RRAM cell (self-rectifying cell) characteristics. To demonstrate the cell variation effect on a large 3-D VRRAM array, we develop a modified lumping method in HSPICE simulator and show that this method substantially reduces the computation time while maintaining high accuracy. Read and write performances including cell variation are investigated according to various array sizes and RRAM characteristics. A large distribution of cell current reduces the RM but hardly affects the WP. Moreover, in 3-D VRRAM with a small number of wordline (WL) layers, a large on/off ratio (RHRS/RLRS) is advantageous for improving the RM and reducing the variation effect. In contrast, a large on/off ratio has little effect on the RM in 3-D VRRAM with many WL layers. This difference occurs because the increased leakage induced in the half-selected cells mainly affects the RM, and the half-selected cells are located in the selected vertical pillar in 3-D VRRAM. © 1963-2012 IEEE.
DOI
10.1109/TED.2018.2878440
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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