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Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method

Title
Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method
Authors
Park J.-S.Shin H.Connelly D.Yergeau D.Yu Z.Dutton R.W.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2004
Journal Title
Solid-State Electronics
ISSN
0038-1101JCR Link
Citation
Solid-State Electronics vol. 48, no. 7, pp. 1163 - 1168
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Quantum effects in the poly-gate are analyzed in two-dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-mode analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects. © 2004 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.sse.2004.01.001
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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