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An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs

Title
An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs
Authors
Lee K.-I.Park Y.J.Min H.S.Lee C.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2004
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 44, no. 1, pp. 73 - 78
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
In this paper, we propose an efficient method including the nonquasistatic effect for a harmonic balance analysis of a short channel MOSFET. Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by an external voltage instantaneously. By comparing the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), we confirmed that the proposed method is efficient and accurate for frequency-domain analyses of the short-channel MOSFETs in the 0.1-μm region.
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엘텍공과대학 > 전자공학과 > Journal papers
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