| 2013 | Erratum: Circuit-level model of phase-locked spin-torque oscillators (Japanese Journal of Applied Physics (2013) 52 04CM08) | 신형순; 이승준 | Erratum |
| 2004 | Evanescent-Mode Analysis of Short-Channel Effects in MOSFETs | 신형순 | Conference Paper |
| 2019 | Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect | 신형순; 선우경 | Article |
| 2016 | Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array | 신형순 | Article |
| 2003 | High cell-efficiency synchronous MRAM adopting unified bit-line cache | 신형순 | Article |
| 2019 | Implementation of multi-layer neural network system for neuromorphic hardware architecture | 신형순; 선우경; 이정원 | Conference Paper |
| 2009 | Improved explicit current-voltage model for long-channel undoped surrounding-gate metal oxide semiconductor field effect transistor | 신형순 | Article |
| 2000 | Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection | 신형순 | Article |
| 2002 | Investigation of noise characteristics of pn diodes by using a device simulator | 신형순 | Conference Paper |
| 2015 | Investigation of power dissipation for ReRAM in crossbar array architecture | 신형순 | Conference Paper |
| 2001 | Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs | 신형순 | Article |
| 2002 | Macro model and sense amplifier for a MRAM | 신형순 | Conference Paper |
| 2007 | Magneto-logic device based on a single-layer magnetic tunnel junction | 신형순; 이승준 | Article |
| 2019 | Memristor Neural Network Training with Clock Synchronous Neuromorphic System | 신형순; 박준희; 선우경 | Article |
| 1999 | Modeling of alpha-particle-induced soft error rate in DRAM | 신형순 | Article |
| 2020 | Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation | 신형순 | Article |
| 2002 | New method to extract the lateral profile of hot-carrier-induced nits by using the charge pumping method | 신형순 | Conference Paper |
| 2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
| 2021 | New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length | 신형순; 박지선 | Article |
| 2020 | Optimization Considerations for Short Channel Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
| 2014 | Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs | 신형순 | Article |
| 2012 | Physics-based SPICE model of spin-torque oscillators | 신형순; 이승준 | Article |
| 2002 | Quantum effects in CMOS devices | 신형순 | Conference Paper |
| 2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
| 2002 | Reduction of reverse short-channel effect in high-energy implanted retrograde well | 신형순 | Conference Paper |
| 2016 | ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device | 신형순 | Article |
| 2021 | Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array | 신형순 | Article |
| 2014 | Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs | 신형순 | Article |
| 2013 | Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs | 신형순 | Conference Paper |
| 2016 | Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array | 신형순; 이승준 | Article |
