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ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device

Title
ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device
Authors
Lim H.Sun W.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
vol. 63, no. 2, pp. 873 - 876
Keywords
Access timeCrossbar arrayParasitic capacitanceSelector device
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The transient response of a crossbar array is investigated with HSPICE circuit simulation. A crossbar array contains many parasitic elements. This brief focuses on the parasitic capacitances of the selector devices and resistors. The read access time is determined for various array sizes and parasitic capacitances. The results show that the read access time increases with the array size and parasitic capacitance, particularly the selector capacitance. The effect of selector capacitance is analyzed with a time-dependent, unit-cell voltage model and simulation. The simulation results reveal that the selector capacitance has a greater effect than the resistor capacitance on the read access time because of the large time constant. The effect of the selector capacitance on the read access time remains significant for larger values of the other parasitic capacitances. © 2016 IEEE.
DOI
10.1109/TED.2015.2506598
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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