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Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

Title
Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs
Authors
Sun W.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2013
Journal Title
IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN
2159-3442JCR Link
Indexed
SCOPUS scopus
Abstract
deformation potential; electron; mobility; phonon mobility; strain; stress; substrate doping concentration
DOI
10.1109/TENCON.2013.6718489
ISBN
9781479928262
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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