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DSpace at EWHA공과대학 전자전기공학전공 Journal papers

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Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

Title: Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

Authors: Sun W.; Shin H.

Ewha Authors: 신형순

SCOPUS Author ID: 신형순

Issue Date: 2013

Journal Title: IEEE Region 10 Annual International Conference, Proceedings/TENCON

ISSN: 2159-3442

Citation: IEEE Region 10 Annual International Conference, Proceedings/TENCON

Indexed: SCOPUS

Document Type: Conference Paper

Abstract: deformation potential; electron; mobility; phonon mobility; strain; stress; substrate doping concentration

DOI: 10.1109/TENCON.2013.6718489

ISBN: 9781479928262

Appears in Collections:: 공과대학 > 전자전기공학전공 > Journal papers

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