DSpace at EWHA: Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:23Z	-
dc.date.available	2016-08-28T11:08:23Z	-
dc.date.issued	2013	*
dc.identifier.isbn	9781479928262	*
dc.identifier.issn	2159-3442	*
dc.identifier.other	OAK-14194	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/230108	-
dc.description.abstract	deformation potential; electron; mobility; phonon mobility; strain; stress; substrate doping concentration	*
dc.description.sponsorship	IEEE Region 10 (Asia Pacific Region);IEEE Xi'an Section;National Natural Science Foundation of China;Northwestern Polytechnical University;Xi'an Jiaotong University	*
dc.language	English	*
dc.title	Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs	*
dc.type	Conference Paper	*
dc.relation.index	SCOPUS	*
dc.relation.journaltitle	IEEE Region 10 Annual International Conference, Proceedings/TENCON	*
dc.identifier.doi	10.1109/TENCON.2013.6718489	*
dc.identifier.scopusid	2-s2.0-84894311327	*
dc.author.google	Sun W.	*
dc.author.google	Shin H.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*