View : 11 Download: 0

Improved explicit current-voltage model for long-channel undoped surrounding-gate metal oxide semiconductor field effect transistor

Title
Improved explicit current-voltage model for long-channel undoped surrounding-gate metal oxide semiconductor field effect transistor
Authors
Son A.Kim J.Jeong N.Choi J.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2009
Journal Title
Japanese Journal of Applied Physics
ISSN
0021-4922JCR Link
Citation
vol. 48, no. 4 PART 2
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The surrounding-gate metal oxide semiconductor field effect transistor (MOSFET) provides the best device structure for the control of the short channel effect. In this paper, we present an improved explicit current-voltage (I-V) model for a long-channel undoped surroundinggate MOSFET. The derivation of this new model considers variations in silicon film radius and gate oxide thickness. For important cases of large silicon film radius and small gate oxide thickness, the new model shows a better agreement with a numerical solution than the previous explicit model. The accuracy of the new model is verified by comparison with numerical simulations. © 2009 The Japan Society of Applied Physics.
DOI
10.1143/JJAP.48.04C035
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE