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Reduction of reverse short-channel effect in high-energy implanted retrograde well

Title
Reduction of reverse short-channel effect in high-energy implanted retrograde well
Authors
Lee H.Park Y.J.Min H.S.Shin H.Kang D.-G.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2002
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 40, no. 4, pp. 649 - 652
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
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엘텍공과대학 > 전자공학과 > Journal papers
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