DSpace at EWHA: Reduction of reverse short-channel effect in high-energy implanted retrograde well

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:57Z	-
dc.date.available	2016-08-28T11:08:57Z	-
dc.date.issued	2002	*
dc.identifier.issn	0374-4884	*
dc.identifier.other	OAK-1014	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/218971	-
dc.description.abstract	In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (&gt;150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.	*
dc.language	English	*
dc.title	Reduction of reverse short-channel effect in high-energy implanted retrograde well	*
dc.type	Conference Paper	*
dc.relation.issue	4	*
dc.relation.volume	40	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	649	*
dc.relation.lastpage	652	*
dc.relation.journaltitle	Journal of the Korean Physical Society	*
dc.identifier.wosid	WOS:000175022300023	*
dc.identifier.scopusid	2-s2.0-0036012684	*
dc.author.google	Lee H.	*
dc.author.google	Park Y.J.	*
dc.author.google	Min H.S.	*
dc.author.google	Shin H.	*
dc.author.google	Kang D.-G.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*