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Evanescent-Mode Analysis of Short-Channel Effects in MOSFETs

Title
Evanescent-Mode Analysis of Short-Channel Effects in MOSFETs
Authors
Lee J.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2004
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 44, no. 1, pp. 50 - 55
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
The short channel effects (SCE) of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate MOSFETs have been analyzed using device simulations and a scaling-length (λ) analysis. It is found that the minimum channel length should be larger than 5λ and that the depletion thickness of the SSR should be around 30 nm in order to be applicable to 70-nm CMOS technology. A high-kappa dielectric shows a limitation in scaling due to the drain-field penetration through the dielectric unless the equivalent SiO 2 thickness is very thin. The SSR gives the smallest SCE of the three structures considered.
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엘텍공과대학 > 전자공학과 > Journal papers
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