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Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array

Title
Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array
Authors
Lim, HyeinLee, SeungjunShin, Hyungsoon
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2016
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN
0018-9383JCR Link

1557-9646JCR Link
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 63, no. 10, pp. 3914 - 3921
Keywords
Crossbar arraymagnetoresistive random access memory (MRAM)nonvolatile memoryspin-transfer torque
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The dynamic characteristics of a spin transfer torque magnetoresistive random access memory crossbar array during write operations were investigated. A spin transfer torque magnetic tunnel junction was combined with a two-terminal selector device instead of a three-terminal CMOS transistor in the crossbar array architecture. The characteristics of the crossbar array architecture were investigated under different bias schemes and transient simulations of write operations were performed under various operating conditions. The variance of the switching time and problematic behaviors was investigated. The floating bias scheme was compared with the 1/2 bias scheme, and simulation results revealed that write errors may be induced in the floating bias scheme by abnormal glitches occurring when the parasitic capacitance becomes large.
DOI
10.1109/TED.2016.2597195
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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