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Modeling of alpha-particle-induced soft error rate in DRAM

Title
Modeling of alpha-particle-induced soft error rate in DRAM
Authors
Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
1999
Journal Title
IEEE Transactions on Electron Devices
ISSN
0018-9383JCR Link
Citation
vol. 46, no. 9, pp. 1850 - 1857
Publisher
IEEE, Piscataway, NJ, United States
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.
DOI
10.1109/16.784184
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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