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Investigation of power dissipation for ReRAM in crossbar array architecture

Title
Investigation of power dissipation for ReRAM in crossbar array architecture
Authors
Sun W.Lim H.Shin H.Lee W.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2015
Journal Title
2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Citation
2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Keywords
crossbar arraypower dissipationReRAM
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Document Type
Conference Paper
Abstract
Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about V<inf>dd</inf>/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes. © 2014 IEEE.
DOI
10.1109/NVMTS.2014.7060847
ISBN
9781479942039
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
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