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Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array

Title
Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array
Authors
Sun W.Choi S.Lim H.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
Japanese Journal of Applied Physics
ISSN
0021-4922JCR Link
Citation
vol. 55, no. 4
Publisher
Japan Society of Applied Physics
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation. © 2016 The Japan Society of Applied Physics.
DOI
10.7567/JJAP.55.04EE10
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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