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Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection

Title
Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection
Authors
Sun W.Park J.-S.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2000
Journal Title
Electronics Letters
ISSN
0013-5194JCR Link
Citation
vol. 36, no. 13, pp. 1152 - 1153
Publisher
IEE, Stevenage, United Kingdom
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effect of trench-oxide depth on the α-particle-induced charge collection is analysed for various junction sizes. Simulation results indicate that the influence of trench-oxide depth on the charge collection substantially increases as the junction size is reduced. Confininement of the charge by the trench oxide in the reduced junction size is identified as a cause of this effect.
DOI
10.1049/el:20000802
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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