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Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Title
Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs
Authors
Lee H.Lee J.-H.Shin H.Park Y.J.Min H.S.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2001
Journal Title
IEEE Electron Device Letters
ISSN
0741-3106JCR Link
Citation
vol. 22, no. 9, pp. 449 - 451
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.
DOI
10.1109/55.944336
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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