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Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs

Title
Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs
Authors
Sun W.Choi S.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2014
Journal Title
Journal of Semiconductor Technology and Science
ISSN
1598-1657JCR Link
Citation
vol. 14, no. 5, pp. 518 - 524
Publisher
Institute of Electronics Engineers of Korea
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
Electron mobility; Intervalley phonon mobility; Intravalley phonon mobility; Strain; Stress; Wafer orientation
DOI
10.5573/JSTS.2014.14.5.518
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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