DSpace at EWHA: Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs

Browse

My Repository

DSpace at EWHA공과대학 전자전기공학전공 Journal papers

View : 642 Download: 0

Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs

Title: Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs

Authors: Sun W.; Choi S.; Shin H.

Ewha Authors: 신형순

SCOPUS Author ID: 신형순

Issue Date: 2014

Journal Title: Journal of Semiconductor Technology and Science

ISSN: 1598-1657

Citation: Journal of Semiconductor Technology and Science vol. 14, no. 5, pp. 518 - 524

Publisher: Institute of Electronics Engineers of Korea

Indexed: SCIE; SCOPUS; KCI

Document Type: Article

Abstract: Electron mobility; Intervalley phonon mobility; Intravalley phonon mobility; Strain; Stress; Wafer orientation

DOI: 10.5573/JSTS.2014.14.5.518

Appears in Collections:: 공과대학 > 전자전기공학전공 > Journal papers

Files in This Item:

Export: RIS (EndNote); XLS (Excel); XML

Show full item record

Find@EWHA

qrcode

: search

BROWSE