2011 | A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors | 신형순 | Article |
2017 | A Guideline for electron mobility enhancement in uniaxially-strained (100)/(100) and (110)/(110) fin field effect transistors | 신형순 | Article |
2013 | A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect | 신형순 | Article |
2016 | An analysis of the read margin and power consumption of crossbar ReRAM arrays | 신형순 | Conference Paper |
2019 | Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method | 신형순 | Article |
2018 | Analysis of read margin of crossbar array according to selector and resistor variation | 신형순; 선우경 | Conference Paper |
2023 | Deep Neural Networks for Determining Subgap States of Oxide Thin-Film Transistors | 신형순; 박지선 | Article |
2002 | Effects of shallow trench isolation on silicon-on-insulator devices for mixed signal processing | 신형순 | Conference Paper |
2016 | Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array | 신형순 | Article |
2019 | Implementation of multi-layer neural network system for neuromorphic hardware architecture | 신형순; 선우경; 이정원 | Conference Paper |
2000 | Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection | 신형순 | Article |
2015 | Investigation of power dissipation for ReRAM in crossbar array architecture | 신형순 | Conference Paper |
2002 | New method to extract the lateral profile of hot-carrier-induced nits by using the charge pumping method | 신형순 | Conference Paper |
2014 | Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs | 신형순 | Article |
2016 | ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device | 신형순 | Article |
2015 | Segmentation of wounds using gradient vector flow | 이병욱; 양세정 | Conference Paper |
2014 | Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs | 신형순 | Article |
2013 | Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs | 신형순 | Conference Paper |
2014 | Temperature dependence of electron mobility in uniaxial strained nMOSFETs | 신형순 | Article |
2017 | The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT | 신형순; 선우경 | Article |