Browsing "전자전기공학전공" byAuthorSun W.

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Showing results 1 to 20 of 20

Issue DateTitleAuthor(s)Type
2011A compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate metal-oxide-semiconductor field-effect transistors신형순Article
2017A Guideline for electron mobility enhancement in uniaxially-strained (100)/(100) and (110)/(110) fin field effect transistors신형순Article
2013A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect신형순Article
2016An analysis of the read margin and power consumption of crossbar ReRAM arrays신형순Conference Paper
2019Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method신형순Article
2018Analysis of read margin of crossbar array according to selector and resistor variation신형순; 선우경Conference Paper
2023Deep Neural Networks for Determining Subgap States of Oxide Thin-Film Transistors신형순; 박지선Article
2002Effects of shallow trench isolation on silicon-on-insulator devices for mixed signal processing신형순Conference Paper
2016Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array신형순Article
2019Implementation of multi-layer neural network system for neuromorphic hardware architecture신형순; 선우경; 이정원Conference Paper
2000Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection신형순Article
2015Investigation of power dissipation for ReRAM in crossbar array architecture신형순Conference Paper
2002New method to extract the lateral profile of hot-carrier-induced nits by using the charge pumping method신형순Conference Paper
2014Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs신형순Article
2016ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device신형순Article
2015Segmentation of wounds using gradient vector flow이병욱; 양세정Conference Paper
2014Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs신형순Article
2013Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs신형순Conference Paper
2014Temperature dependence of electron mobility in uniaxial strained nMOSFETs신형순Article
2017The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT신형순; 선우경Article

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