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Temperature dependence of electron mobility in uniaxial strained nMOSFETs

Title
Temperature dependence of electron mobility in uniaxial strained nMOSFETs
Authors
Sun W.Shin H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2014
Journal Title
Journal of Semiconductor Technology and Science
ISSN
1598-1657JCR Link
Citation
vol. 14, no. 2, pp. 146 - 152
Publisher
Institute of Electronics Engineers of Korea
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
Electron mobility; Intervalley phonon mobility; Intravalley phonon mobility; Strain; Stress; Temperature
DOI
10.5573/JSTS.2014.14.2.146
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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