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The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Title
The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT
Authors
Kim M.Sun W.Kang J.Shin H.
Ewha Authors
신형순선우경
SCOPUS Author ID
신형순scopus
Issue Date
2017
Journal Title
Semiconductor Science and Technology
ISSN
0268-1242JCR Link
Citation
vol. 32, no. 8
Keywords
light shieldlow-temperature polycrystalline silicon (LTPS)SPICE simulationthinfilm transistor (TFT)
Publisher
Institute of Physics Publishing
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified. © 2017 IOP Publishing Ltd.
DOI
10.1088/1361-6641/aa7477
Appears in Collections:
공과대학 > 전자공학과 > Journal papers
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