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Analysis of read margin of crossbar array according to selector and resistor variation

Title
Analysis of read margin of crossbar array according to selector and resistor variation
Authors
Sun W.Shin H.
Ewha Authors
신형순선우경
SCOPUS Author ID
신형순scopus
Issue Date
2018
Journal Title
International Conference on Electronics, Information and Communication, ICEIC 2018
Citation
International Conference on Electronics, Information and Communication, ICEIC 2018 vol. 2018-January, pp. 1 - 3
Keywords
Crossbar arrayread marginRRAM
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Document Type
Conference Paper
Abstract
The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor. © 2018 Institute of Electronics and Information Engineers.
DOI
10.23919/ELINFOCOM.2018.8330651
ISBN
9781538647547
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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