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공과대학
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Results 1-10 of 10 (Search time: 0.0 seconds).
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Issue Date
Title
Author(s)
Type
2016
Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs
신형순
Article
2016
Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array
신형순
Article
2016
ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device
신형순
Article
2016
Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array
신형순; 이승준
Article
2016
An analysis of the read margin and power consumption of crossbar ReRAM arrays
신형순
Conference Paper
2016
Analysis of the effect of the density of states on the characteristics of thin-film transistors
신형순
Conference Paper
2016
A new bias scheme for a low power consumption ReRAM crossbar array
신형순; 선우경
Article
2016
Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region
신형순
Article
2016
Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential
신형순
Article
2016
A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation
신형순; 이승준
Review
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nonvolatile memory
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read margin
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acceptor-like density of states
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bias scheme
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capacitance-voltage characteristics
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