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Analysis of the effect of the density of states on the characteristics of thin-film transistors

Title
Analysis of the effect of the density of states on the characteristics of thin-film transistors
Authors
Kim M.Lee I.Shin H.Shin M.-H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN
2159-3442JCR Link
Citation
IEEE Region 10 Annual International Conference, Proceedings/TENCON vol. 2016-January
Keywords
acceptor-like density of statesdonor-like density of statesthin-film transistors
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Document Type
Conference Paper
Abstract
The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS. © 2015 IEEE.
DOI
10.1109/TENCON.2015.7372859
ISBN
9781479986415
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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