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dc.contributor.author신형순*
dc.date.accessioned2016-08-29T12:08:38Z-
dc.date.available2016-08-29T12:08:38Z-
dc.date.issued2016*
dc.identifier.isbn9781479986415*
dc.identifier.issn2159-3442*
dc.identifier.otherOAK-18413*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/231459-
dc.description.abstractThe effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS. © 2015 IEEE.*
dc.languageEnglish*
dc.publisherInstitute of Electrical and Electronics Engineers Inc.*
dc.subjectacceptor-like density of states*
dc.subjectdonor-like density of states*
dc.subjectthin-film transistors*
dc.titleAnalysis of the effect of the density of states on the characteristics of thin-film transistors*
dc.typeConference Paper*
dc.relation.volume2016-January*
dc.relation.indexSCOPUS*
dc.relation.journaltitleIEEE Region 10 Annual International Conference, Proceedings/TENCON*
dc.identifier.doi10.1109/TENCON.2015.7372859*
dc.identifier.scopusid2-s2.0-84962198364*
dc.author.googleKim M.*
dc.author.googleLee I.*
dc.author.googleShin H.*
dc.author.googleShin M.-H.*
dc.contributor.scopusid신형순(7404012125)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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