Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2016-08-29T12:08:38Z | - |
dc.date.available | 2016-08-29T12:08:38Z | - |
dc.date.issued | 2016 | * |
dc.identifier.isbn | 9781479986415 | * |
dc.identifier.issn | 2159-3442 | * |
dc.identifier.other | OAK-18413 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/231459 | - |
dc.description.abstract | The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS. © 2015 IEEE. | * |
dc.language | English | * |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | * |
dc.subject | acceptor-like density of states | * |
dc.subject | donor-like density of states | * |
dc.subject | thin-film transistors | * |
dc.title | Analysis of the effect of the density of states on the characteristics of thin-film transistors | * |
dc.type | Conference Paper | * |
dc.relation.volume | 2016-January | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | IEEE Region 10 Annual International Conference, Proceedings/TENCON | * |
dc.identifier.doi | 10.1109/TENCON.2015.7372859 | * |
dc.identifier.scopusid | 2-s2.0-84962198364 | * |
dc.author.google | Kim M. | * |
dc.author.google | Lee I. | * |
dc.author.google | Shin H. | * |
dc.author.google | Shin M.-H. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |