View : 17 Download: 0

Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs

Title
Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs
Authors
Choi, SujinSun, WookyungShin, Hyungsoon
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
APPLIED PHYSICS EXPRESS
ISSN
1882-0778JCR Link1882-0786JCR Link
Citation
vol. 9, no. 1
Publisher
IOP PUBLISHING LTD
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The stress effect in uniaxially strained (100)- and (110)- oriented double-gate silicon-on-insulator nMOSFETs is analyzed. A model of the silicon-thickness-dependent deformation potential (Dac-TSi) is used to accurately calculate the mobility by considering the quantum confinement effect. The mobility enhancements in the (100) and (110) orientations were found to exhibit considerably different silicon thickness dependencies. As the silicon thickness decreases, the mobility enhancement in the (100) case exhibits a second peak, whereas it diminishes in the (110) case. This phenomenon results from differences in the quantization mass that affect the energy differences between the first subbands of two- and four-fold degenerate valleys. (C) 2016 The Japan Society of Applied Physics
DOI
10.7567/APEX.9.014201
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE