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Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Title
Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential
Authors
Choi, S.Sun, W.Lee, I.Shin, H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
ISSN
1533-4880JCR Link1533-4899JCR Link
Citation
vol. 16, no. 5, pp. 5150 - 5154
Keywords
Mobility EnhancementUniaxial StrainDeformation PotentialSilicon Thickness
Publisher
AMER SCIENTIFIC PUBLISHERS
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The stress effect in uniaxially strained (100)- and (110)-oriented single-gate (SG) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was analyzed. A model of a silicon-thickness-dependent deformation potential (D-ac_Tsi) was used for accurate calculation of mobility using a Schrodinger-Poisson solver. The simulation results obtained using the D-ac_Tsi model exhibited excellent agreement with the measured mobility for both strained and unstrained conditions. The enhancements in electron mobility under conditions of longitudinal tensile strain were analyzed as a function of the silicon thickness and strain. As the silicon thickness decreased, the mobility enhancement in (100) SG MOSFETs reached a peak, whereas it diminished in (110) SG MOSFETs. As the strain increased, mobility enhancement increased in the (110) case, whereas it saturated in the (100) case. Therefore, larger mobility enhancement in the (110) orientation is expected. These differences in enhancement between the (100) and (110) cases resulted from differences in the quantization mass, which affect the energy difference between the 1st subbands of two-fold and four-fold degenerate valleys, as well as occupancy change.
DOI
10.1166/jnn.2016.12239
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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