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Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region

Title
Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region
Authors
Kim, MiryeonSun, WookyungShin, MinhoKim, KiwooKang, JongseukShin, Hyungsoon
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2016
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN
0268-1242JCR Link1361-6641JCR Link
Citation
vol. 31, no. 5
Keywords
capacitance-voltage characteristicsdoping concentrationlightly doped drain (LDD)thin-film transistor (TFT)
Publisher
IOP PUBLISHING LTD
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The effect of lightly doped drain (LDD) doping concentration on the capacitance of a low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is investigated. An anomalous gate-to-source capacitance phenomenon is observed: first, the capacitance decreases, and then it increases according to the gate voltage in the saturation region. This phenomenon is not affected by the subgap density-of-states and arises as the doping concentration of the LDD region is reduced. To investigate the effects of each source and the drain LDD dose on the gate-to-source capacitance, two-dimensional device simulations were conducted in which each dose of the source and drain LDD was changed individually. The reduced controllability of the source voltage to the gate charge in the saturation region due to the increased resistance of the source LDD region with low LDD dose is identified as the reason for this anomalous capacitance phenomenon.
DOI
10.1088/0268-1242/31/5/055015
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엘텍공과대학 > 전자공학과 > Journal papers
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