| 2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
| 2002 | Reduction of reverse short-channel effect in high-energy implanted retrograde well | 신형순 | Conference Paper |
| 2016 | ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device | 신형순 | Article |
| 2021 | Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array | 신형순 | Article |
| 2014 | Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs | 신형순 | Article |
| 2013 | Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs | 신형순 | Conference Paper |
| 2016 | Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array | 신형순; 이승준 | Article |
| 2014 | Temperature dependence of electron mobility in uniaxial strained nMOSFETs | 신형순 | Article |
| 2007 | The 3-bit gray counter based on magnetic-tunnel-junction elements | 신형순; 김낙명; 이승준 | Conference Paper |
| 2017 | The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT | 신형순; 선우경 | Article |
| 2001 | Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs | 신형순 | Article |
| 2014 | Unified analytical model for switching behavior of magnetic tunnel junction | 신형순; 이승준 | Article |
| 1996 | Unified model for junction size, substrate doping, and energy dependence of α-particle-induced charge collection | 신형순 | Article |
