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Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

Title
Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs
Authors
Ryou C.-R.Hwang S.W.Shin H.Lee C.-H.Park Y.J.Shick Min H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2001
Journal Title
Solid-State Electronics
ISSN
0038-1101JCR Link
Citation
vol. 45, no. 7, pp. 1165 - 1172
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared. © 2001 Elsevier Science Ltd. All rights reserved.
DOI
10.1016/S0038-1101(01)00034-X
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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