DSpace at EWHA: Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:47Z	-
dc.date.available	2016-08-28T11:08:47Z	-
dc.date.issued	2001	*
dc.identifier.issn	0038-1101	*
dc.identifier.other	OAK-821	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/218860	-
dc.description.abstract	The threshold voltage fluctuation caused by random distribution of discrete oxide charges is studied using three-dimensional (3D) simulations. It is found that the effect of discrete oxide charges on the terminal current variation depends on their lateral positions in the channel and, for the same number fluctuations of discrete charges, a large threshold voltage fluctuation is introduced in a device with deeper source/drain junction depth (Xj). The effect of 3D current flow is found to give negligible effect on the threshold voltage fluctuation. Finally, the effects of oxide charges and dopants on the threshold voltage fluctuation are compared. © 2001 Elsevier Science Ltd. All rights reserved.	*
dc.language	English	*
dc.title	Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs	*
dc.type	Article	*
dc.relation.issue	7	*
dc.relation.volume	45	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	1165	*
dc.relation.lastpage	1172	*
dc.relation.journaltitle	Solid-State Electronics	*
dc.identifier.doi	10.1016/S0038-1101(01)00034-X	*
dc.identifier.wosid	WOS:000170893100018	*
dc.identifier.scopusid	2-s2.0-0035390453	*
dc.author.google	Ryou C.-R.	*
dc.author.google	Hwang S.W.	*
dc.author.google	Shin H.	*
dc.author.google	Lee C.-H.	*
dc.author.google	Park Y.J.	*
dc.author.google	Shick Min H.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*